Semiconductor light-emitting devices

Abstract

A semiconductor laser device comprises an n-type cladding layer, a p-type cladding layer, and an active layer which is sandwiched between the n-type cladding layer and the p-type cladding layer. The p-type cladding layer contains magnesium as a dopant impurity. Further, an n-type diffusion blocking layer of a nitride compound semiconductor material located between the active layer and the p-type cladding layer and is InxAlyGa1−x−yN, where x≧0, y≧0, and (x+y)<1. The n-type diffusion blocking layer preferably has a concentration of a dopant impurity producing n-type conductivity in a range from 5×1017 cm−3 to 5×1019 cm−3.

Dependencies are inferred from the claim text.