Thin film transistor substrate and manufacturing method thereof

A method of manufacturing a thin film transistor substrate, the method comprising:

• forming a gate metal pattern including a first gate electrode formed on an insulation layer in a display area;
• forming a gate insulation layer on the gate metal pattern;
• forming a first semiconductor pattern on the gate insulation layer overlapping the first gate electrode;
• forming a data metal pattern including a first source electrode and a first drain electrode that are connected to both ends of the first semiconductor pattern;
• forming a transparent conductive pattern including a pixel electrode connected to the first drain electrode on the gate insulation layer;
• and
• forming a protective layer on the first semiconductor pattern and the data metal pattern.

A method of manufacturing a thin film transistor substrate, the method comprising:

• a first mask process of forming a gate metal pattern including a first gate electrode on an insulation substrate corresponding to a display area;
• a second mask process of forming a gate insulation layer on the gate metal pattern and forming a first semiconductor pattern on the gate insulation layer overlapping the first gate electrode;
• a third mask process of forming a data metal pattern including a first source electrode and a first drain electrode connected to both sides of the first semiconductor pattern;
• and
• a fourth mask process of forming on the gate insulation layer a transparent conductive pattern including a pixel electrode connected to the first drain electrode and forming a protective layer on the first semiconductor pattern and the data metal pattern.