Semiconductor device

A semiconductor device comprising:

• a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate;
• a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween;
• a first interlayer insulating film provided to cover the first conductive film;
• a second conductive film provided over the first interlayer insulating film to overlap with at least part of the impurity region;
• a second interlayer insulating film provided over the second conductive film;
• and
• a third conductive film provided over the second interlayer insulating film,
• wherein the third conductive film is electrically connected to the impurity region through an opening formed in the first interlayer insulating film, the second interlayer insulating film, and the second conductive film.

A semiconductor device comprising:

• a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate;
• a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween;
• a first interlayer insulating film provided to cover the first conductive film;
• a second conductive film provided over the first interlayer insulating film to overlap with at least part of the impurity region;
• a second interlayer insulating film provided over the second conductive film;
• and
• a third conductive film provided over the second interlayer insulating film,
• wherein the second conductive film is electrically connected to the impurity region through an opening formed in the first interlayer insulating film;
• and
• the third conductive film is electrically connected to the second conductive film through an opening formed in the second interlayer insulating film.

A semiconductor device comprising:

• a semiconductor film including a channel formation region, a first impurity region, and a second impurity region, which is provided over a substrate;
• a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween;
• a second conductive film provided over the first impurity region to be in contact with the gate insulating film;
• an interlayer insulating film provided to cover the first conductive film and the second conductive film;
• and
• a third conductive film provided over the interlayer insulating film,
• wherein the first conductive film and the second conductive film are formed of the same material, and
• wherein the third conductive film is electrically connected to the first impurity region through an opening formed in the interlayer insulating film.

A semiconductor device comprising:

• a semiconductor film including a channel formation region, a first impurity region, and a second impurity region, which is provided over a substrate;
• a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween;
• a second conductive film provided over the first impurity region to be in contact with the gate insulating film;
• an interlayer insulating film provided to cover the first conductive film and the second conductive film;
• and
• a third conductive film provided over the interlayer insulating film,
• wherein the first conductive film and the second conductive film are formed of the same material;
• and
• wherein the third conductive film is electrically connected to the first impurity region through an opening formed in the interlayer insulating film and the second conductive film.

A semiconductor device comprising:

• a semiconductor film including a channel formation region, a first impurity region, and a second impurity region, which is provided over a substrate;
• a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween;
• a second conductive film provided to cover an end portion of the first impurity region;
• an interlayer insulating film provided to cover the first conductive film and the second conductive film;
• and
• a third conductive film provided over the interlayer insulating film,
• wherein the first conductive film and the second conductive film are formed of the same material;
• and
• wherein the third conductive film is electrically connected to the second conductive film through an opening formed in the interlayer insulating film.

A semiconductor device comprising:

• an island-shaped protective film provided over a substrate;
• a semiconductor film including a channel formation region and an impurity region, which is provided over the protective film with an insulating film interposed therebetween;
• a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween;
• a first interlayer insulating film provided to cover the first conductive film;
• a second conductive film provided over the first interlayer insulating film to overlap with at least part of the impurity region;
• a second interlayer insulating film provided over the second conductive film;
• and
• a third conductive film provided over the second interlayer insulating film,
• wherein the third conductive film is electrically connected to the impurity region through an opening formed in the first interlayer insulating film, the second interlayer insulating film, and the second conductive film.

A semiconductor device comprising:

• a protective film provided over a substrate;
• an insulating film provided over the protective film, a semiconductor film including a channel formation region and an impurity region, which is provided over the insulating film;
• a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween;
• an interlayer insulating film provided to cover the first conductive film;
• and
• a second conductive film provided over the interlayer insulating film,
• wherein the protective film is provided to surround the semiconductor film;
• and
• wherein the second conductive film is electrically connected to the impurity region through an opening formed in the interlayer insulating film.

A semiconductor device comprising:

• a semiconductor film including a channel formation region and an impurity region, which is provided over a substrate;
• a first conductive film provided over the channel formation region with a gate insulating film interposed therebetween;
• a first interlayer insulating film provided to cover the first conductive film;
• a second conductive film provided over the first interlayer insulating film to overlap with at least part of the impurity region;
• a second interlayer insulating film provided over the second conductive film;
• a third conductive film provided over the second interlayer insulating film;
• a third interlayer insulating film provided to cover the third conductive film;
• and
• an island-shaped protective film provided over the third interlayer insulating film,
• wherein the third conductive film is electrically connected to the impurity region through an opening formed in the first interlayer insulating film, the second interlayer insulating film;
• and
• wherein the semiconductor film and the protective film overlap with each other.