P-channel nanocrystalline diamond field effect transistor
AssigneeAKHAN Technologies, Inc.
InventorAdam Khan
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Abstract
An electrically conducting p-channel diamond lattice field effect transistor (DLFET) composed of nanocrystalline diamond having at least about 1020 atoms/cm3 of boron in conduction channel is disclosed, along with methods of making the same. The nanocrystalline diamond may be characterized by having an average grain size diameter of less than 1 μm, and in particular, grain sizes on the order of 10 to 20 nm, for improved performance of the DLFET.
Claims34
A field effect transistor comprising a polycrystalline diamond conducting channel doped with boron having a concentration of at least about 1020 atoms/cm3, wherein the polycrystalline diamond conducting channel has an average grain size below 1 μm.
A method of manufacturing a nanocrystalline P-channel diamond lattice field effect transistor, the method comprising:
- doping a nanocrystalline diamond region with boron to form the nanocrystalline P-channel diamond lattice region extending between a source and drain of the field effect transistor and below a transistor gate, wherein the boron in the nanocrystalline P-channel diamond lattice region has a concentration of at least about 1020 atoms/cm3, and wherein the doping comprises ion implantation.
Dependencies are inferred from the claim text.