US 2008/0073642 A1 · Semi-Conductor Component, Component, Method for the Production Thereof and Use of Inorganic-Organic Hybrid Polymers for Producng Semi-Conductor Components

Abstract

The invention relates to a semiconductor component having a metal-insulator structure (MIS) which contains as basic components a substrate, a layer made of an organic semiconductor material and a dielectric layer as insulator. The substrate and/or the dielectric layer made of an inorganic-organic hybrid polymer is chosen from these basic components. In addition, the invention relates to a method for the production of semiconductor components of this type and also to the use of inorganic-organic hybrid polymers for the production of semiconductor components.

Claims30

Dependent claims

Semiconductor component having a metal-insulator structure (MIS) which contains a substrate, a layer made of an organic semiconductor material and a dielectric layer as insulator,

characterised in that
the substrate and/or the dielectric layer comprises an inorganic-organic hybrid polymer.

Semiconductor component according to one of the preceding claims,

characterised in that the inorganic-organic hybrid polymer can be obtained by a method having the steps:
(i) precondensation of:
a) 1 to 10% by mol of at least one silicon compound of formula I:
MR4 (I)
M being selected from the group silicon, zirconium, aluminium and titanium and R being a halogen, hydroxy, alkoxy, acyloxy or a chelate ligand;
b) 20 to 94% by mol of at least one organic silane of formula II:
R″m(YR′″)nSiX(4-m-n) (II)
R″ being alkyl, aryl, alkylaryl, arylalkyl,
R′″ being alkylene, alkenylene, arylene, alkylarylene, arylalkylene, alkenylarylene, arylalkenylene,
R″ and R′″ being able to be interrupted by oxygen, sulphur or —NH—,
X being hydrogen, halogen, hydroxy, alkoxy, acyloxy, —NR2′, R′ being equal to H or alkyl,
Y being a polymerisable group,
m being a whole number from 0 to 2,
n being a whole number from 1 to 3,
m+n extending from 1 to 3 and
c) 5 to 30% by mol of at least one organic silane of formula III
R″pSiX4-p (III)
R′ and X having the above meaning and p being equal to 1, 2 or 3 and if necessary
d) 0 to 10% by mol of at least one low volatile metal oxide, soluble in the reaction medium, of an element of groups Ia to Va or Vb or of a compound, soluble in the reaction medium, of one of these elements which form a low volatile oxide;
without external addition of water, if necessary in the presence of an organic solvent at a temperature between 0 and 90° C. during a time period between 0.5 and 48 hours and
(ii) hydrolysis condensation of the precondensate of step (i) with the stoichiometric quantity of water, at a temperature between 0 and 100° C. during a time period between 1 and 72 hours.

18 more elements

Dependencies are inferred from the claim text.

Semi-Conductor Component, Component, Method for the Production Thereof and Use of Inorganic-Organic Hybrid Polymers for Producng Semi-Conductor Components

Life of this patent

Semi-Conductor Component, Component, Method for the Production Thereof and Use of Inorganic-Organic Hybrid Polymers for Producng Semi-Conductor Components

Life of this patent

Abstract

Claims30