Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device comprising the steps of:

• forming a quantum dot on a base layer by self-assembled growth;
• irradiating Sb or GaSb to a surface of the base layer before or in the step of forming the quantum dot;
• and
• growing a capping layer on the quantum dot.

A method of manufacturing a semiconductor device comprising the step of:

• repeating the step of growing a quantum dot layer including a quantum dot formed by self-assembled growth;
• the step of irradiating an organic Sb raw material gas to a surface of the quantum dot layer;
• and the step of growing a capping layer on the quantum dot layer to thereby form above a semiconductor substrate an active layer including n layers (n is an integer of 2 or more) of the quantum dot layers,
• in the step of forming the active layer, a V/III ratio of the quantum dot layer of the (i+1)-th layer (i is an integer satisfying 1≦i≦n−1) in the growth being set higher than a V/III ratio of the quantum dot layer of the i-th layer in the growth.

A method of manufacturing a semiconductor device comprising the step of

• repeating the step of growing a quantum dot layer including a quantum dot formed by self-assembled growth;
• the step of irradiating Sb or GaSb to a surface of a base layer of the quantum dot layer before or in the step of growing the quantum dot layer;
• and the step of growing a capping layer on the quantum dot layer to thereby form above a semiconductor substrate an active layer including n layers (n is an integer of 2 or more) of the quantum dot layers,
• in the step of forming the active layer, a V/III ratio of the quantum dot layer of the (i+1)-th layer (i is an integer satisfying 1≦i≦n−1) in the growth being set higher than a V/III ratio of the quantum dot layer of the i-th layer in the growth.

A semiconductor device comprising:

• a quantum dot formed on a base layer by self-assembled growth;
• a capping layer burying the quantum dot;
• and
• a thin film formed between the quantum dot and the capping layer and containing a group III metal and Sb.