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US 2008/0073489 A1Published application
Semiconductor apparatus and light detection method
AssigneeSony Corporation
InventorKoichiro Kishima
Life of this patent
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Abstract
A semiconductor apparatus includes an optical waveguide provided within a semiconductor region and above an insulating layer, and a plurality of photodetectors provided at the optical waveguide. The plurality of photodetectors includes insulated-gate field-effect transistors. The photodetectors capture data at different timings.
Claims6
A semiconductor apparatus comprising:
- an optical waveguide provided within a semiconductor region and above an insulating layer;
- and
- a plurality of photodetectors provided at the optical waveguide,
- wherein the plurality of photodetectors includes insulated-gate field-effect transistors, and
- wherein the photodetectors capture data at different timings.
2 more elements
A light detection method performed using a semiconductor apparatus that includes an optical waveguide provided within a semiconductor region and above an insulating layer;
- and a plurality of photodetectors provided above the optical waveguide in the semiconductor region, the plurality of photodetectors including insulated-gate field-effect transistors, the method comprising the steps of:
- switching each photodetector among three modes in a sequential manner, the three modes including a data-deleting mode, a data-capturing mode, and a data-detecting mode;
- and
- detecting light propagating through the optical waveguide by allowing the photodetectors to capture data at different timings in the data-capturing mode and comparing outputs of the photodetectors so as to detect the light on the basis of whether a time difference in the timings at which the data is captured exists.
1 more element
Dependencies are inferred from the claim text.