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AssigneeEbara Corporation
InventorsTohru Satake, Nobuharu Noji, Masahiro Hatakeyama, Kenji Watanabe
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The invention relates to a method for enabling repair of a defect in a substrate, particularly the invention provides a method and apparatus for enabling repair of a pattern shape in a semiconductor device, which has not been able to be practiced because of lack of a suitable method, and further provides a method for manufacturing the semiconductor device using those. A method for repairing the pattern shape of a substrate having an imperfect pattern is used, which includes (a) a step for inspecting the substrate and thus detecting the imperfect pattern, and (b) a step for repairing the pattern shape by performing etching or deposition to the detected imperfect-pattern using radiation rays. Moreover, apparatus for repairing a pattern shape of a via-hole in a wafer having an imperfect via-hole is used, which has a defect inspection section for detecting the imperfect via-hole, and an etching section for etching the imperfect via-hole using a fast atom beam.
A shape repairing apparatus for repairing a pattern shape of a substrate having an imperfect pattern, comprising a defect inspection section for detecting the imperfect pattern, and a radiation-ray irradiation section for performing etching to the imperfect pattern using radiation rays, wherein irradiation time length of the radiation rays is varied relative to image contrast of the imperfect patterns obtained by the defect inspection section.
Dependencies are inferred from the claim text.