UV blocking and crack protecting passivation layer fabricating method
AssigneeMacronix International Co., Ltd.
InventorsLee Chen, Shing Luo, Chin Su
Life of this patent
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Abstract
A method for fabricating a semiconductor device includes providing a semiconductor substrate comprising a patterned metal conductor layer. To provide UV blocking, an overlying separation layer is formed over the substrate, and a UV blocking layer of silicon enriched oxide is formed over the separation layer. The UV blocking layer has a silicon atomic concentration sufficient for ultraviolet blocking. A gap-filling, hydrogen-blocking layer may be formed over the semiconductor substrate, and any the UV blocking layer, to prevent hydrogen from passing therethrough.
Claims14
A method for fabricating a semiconductor device having an ultraviolet (UV) blocking layer comprising the steps of:
- providing a semiconductor substrate comprising a patterned metal conductor layer;
- forming a separation layer overlying the semiconductor substrate and patterned metal conductor layer;
- forming a UV blocking layer of silicon enriched oxide overlying said separation layer;
- and
- the UV blocking layer forming step being carried out so that the UV blocking layer has a silicon atomic concentration sufficient for ultraviolet blocking.
A method for fabricating a semiconductor device having a crack protecting, hydrogen-blocking passivation layer comprising the steps of:
- providing a semiconductor substrate comprising a patterned conductor layer;
- and
- forming a passivation layer overlying the semiconductor substrate and the patterned conductor layer, the passivation layer forming step comprising:
- forming a gap-filling, hydrogen-blocking layer over the semiconductor substrate and patterned conductor layer, the gap-filling, hydrogen-blocking layer forming step carried out so that the gap-filling, hydrogen-blocking layer is constructed to prevent hydrogen from passing therethrough;
- and
- forming a compressively stressed layer overlying the gap-filling, hydrogen-blocking layer to help prevent cracks in the passivation layer.
Dependencies are inferred from the claim text.