Method for etching silicon-germanium in the presence of silicon
AssigneeSTMicroelectronics S.r.l.
InventorsNicholas Loubet, Didier Dutartre, Alexandre Talbot, Laurent Rubaldo
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Abstract
A method for selectively etching single-crystal silicon-germanium in the presence of single-crystal silicon, including a chemical etch based on hydrochloric acid in gaseous phase at a temperature lower than approximately 700° C.
Claims10
A method for selectively etching single-crystal silicon-germanium in the presence of single-crystal silicon, comprising a chemical etch based on hydrochloric acid in gaseous phase at a temperature lower than approximately 700° C.
A method for forming a single-crystal silicon layer locally isolated from an underlying single-crystal silicon substrate by a vacuum, comprising:
- forming a single-crystal silicon-germanium layer on the substrate;
- forming the silicon layer on the single-crystal silicon-germanium layer;
- and
- removing the silicon-germanium layer using a chemical etch based on hydrochloric acid in gaseous phase at a temperature lower than approximately 700° C.
Dependencies are inferred from the claim text.