Back to results
US 2007/0190742 A1Published application
Semiconductor device including shallow trench isolator and method of forming same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsYou-Hua Chou, Hung Chang, Chin Lan, Yi-Ming Chen
Life of this patent
Estimating the term…
Abstract
A semiconductor device and method of manufacturing include an STI trench having a low-k dielectric material as a liner oxide layer and a bulk oxide trench fill layer.
Claims46
A method of manufacturing a semiconductor device, comprising:
- providing a substrate;
- forming an oxide layer over the substrate;
- forming a nitride layer over the oxide layer;
- forming an organic layer over the nitride layer;
- forming a photoresist layer over the organic layer;
- patterning the photoresist layer to form a photoresist mask including an opening for a trench to be formed in said substrate;
- etching the organic layer, the nitride layer, and the oxide layer through the opening in the photoresist mask to expose a portion of the substrate;
- etching the exposed portion of the substrate to form the trench in the substrate;
- removing the photoresist mask;
- forming a porous silicon oxide liner layer in the trench by PECVD;
- and
- filling the trench with an isolation oxide.
9 more elements
A method of manufacturing a semiconductor device, comprising:
- providing a substrate;
- forming an oxide layer over the substrate;
- forming a nitride layer over the oxide layer;
- forming an organic layer over the nitride layer;
- forming a photoresist layer over the organic layer;
- patterning the photoresist layer to form a photoresist mask including an opening for a trench to be formed in said substrate;
- etching the organic layer, the nitride layer, and the oxide layer through the openings in the photoresist mask to expose a portion of the substrate;
- etching the exposed portion of the substrate to form the trench in the substrate;
- removing the photoresist mask;
- forming a first porous silicon oxide liner layer in the trench by PECVD;
- forming a second porous silicon oxide liner layer on the first liner layer by PECVD;
- and
- filling the trench with an isolation oxide.
10 more elements
A method of manufacturing a semiconductor device, comprising:
- providing a substrate;
- forming an oxide layer over the substrate;
- forming a nitride layer over the pad oxide layer;
- forming an organic layer over the nitride layer;
- forming a photoresist layer over the organic layer;
- patterning the photoresist layer to form a photoresist mask including an opening for a trench to be formed in said substrate;
- etching the organic layer, the nitride layer, and the oxide layer through the opening in the photoresist mask to expose a portion of the substrate;
- etching the exposed portion of the substrate to form the trench in the substrate;
- removing the photoresist mask;
- forming a plurality of porous silicon oxide liner layers in the trench by PECVD;
- and
- filling the trench with an isolation oxide.
9 more elements
A semiconductor device, comprising:
- a substrate;
- an oxide layer over the substrate;
- a nitride layer over the oxide layer;
- an organic layer over the nitride layer;
- a trench in the substrate;
- a porous PECVD silicon oxide liner layer in the trench;
- and
- an isolation oxide covering the liner layer.
5 more elements
A semiconductor device, comprising:
- a substrate;
- an oxide layer over the substrate;
- a nitride layer over the oxide layer;
- an organic layer over the nitride layer;
- a trench in the substrate;
- a first porous PECVD silicon oxide liner layer in the trench;
- a second porous PECVD silicon oxide liner layer in the trench;
- and
- an isolation oxide covering the liner layer.
6 more elements
A semiconductor device, comprising:
- a substrate;
- an oxide layer over the substrate;
- a nitride layer over the oxide layer;
- an organic layer over the nitride layer;
- a trench in the substrate;
- a plurality of porous PECVD silicon oxide liner layers in the trench;
- and
- an isolation oxide covering the plurality of liner layers.
5 more elements
Dependencies are inferred from the claim text.