Precursors for deposition of metal oxide layers or films
AssigneeSigma-Aldrich Co.
InventorAnthony Jones
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Abstract
Rare earth metal precursors, for use in MOCVD techniques have a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group. Methods of making such precursors and methods of depositing metal oxide layers from such precursors are also described.
Claims39
Rare earth metal precursors, for use in MOCVD techniques having the following general formula:
- M[OCR1(R2)(CH2)nX]3
- wherein M is a rare earth metal, R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group, n=1 to 4.
A method of making rare earth metal oxide precursors for use in MOCVD techniques comprising reacting a ligand HOCR1(R2)(CH2)nX, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group, n=1 to 4, with a rare earth metal alkylamide M(NR2)3 or silylamide precursor M(N(SiR3)2)3 precursor, Pr{N(SiMe3)2}3, wherein R=alkyl, in appropriate molar proportions.
A method of making lanthanide and rare earth element complexes of the formula M[OCR1(R2)CH2X]3, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group and n=1 to 4, comprising the salt exchange reaction of M(NO3)3(tetraglyme) with an akali metal or alkaline earth metal salt of [OCR1(R2)CH2X]3 (mmp) in tetrahydrofuran solvent.
A method of depositing a single or mixed oxide layer or film comprising depositing the layer or film by MOCVD using a rare earth metal precursor having a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group, in which the precursor is contained in a metalorganic bubbler.
A method of depositing a single or mixed oxide layer or film, comprising depositing the layer or film by MOCVD using a rare earth metal precursors precursor having a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group, or by liquid injection MOCVD, in which the precursor is dissolved in an appropriate inert organic solvent and then evaporated into the vapour phase using a heated evaporator.
A method of depositing a single or mixed oxide layer or film comprising depositing the layer or film by atomic layer deposition (ALD) using a rare earth metal precursors having a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group.
A method of depositing a single or mixed oxide layer or film comprising depositing the layer or film by a non-vapour phase deposition technique using a rare earth metal precursor having a ligand of the general formula OCR1(R2)CH2X, wherein R1 is H or an alkyl group, R2 is an optionally substituted alkyl group and X is selected from OR and NR2, wherein R is an alkyl group or a substituted alkyl group.
Dependencies are inferred from the claim text.