Resist cover film-forming material, process for forming resist pattern, semiconductor device and process for manufacturing the same

A process for forming a resist pattern comprising:

• forming a resist film on a surface of a workpiece to be processed,
• forming a resist cover film on the resist film using a resist cover film-forming material,
• irradiating the resist film with exposure light through the resist cover film by liquid immersion exposure, and
• developing the resist film,
• wherein the resist cover film-forming material comprises a resin having an alicyclic skeleton at any of the main chain and the side chains;
• and the resist cover film-forming material itself is nonphotosensitive and is used for forming a resist cover film which covers a resist film when the resist film is subjected to liquid immersion exposure.

A process for manufacturing a semiconductor device comprising the steps of:

• forming a resist pattern, and
• patterning,
• the forming a resist pattern comprises
• forming a resist film on a surface of a workpiece to be processed,
• forming a resist cover film on the resist film using a resist cover film-forming material,
• irradiating the resist film with exposure light through the resist cover film by liquid immersion exposure, and
• developing the resist film to thereby form a resist pattern;
• and
• the patterning comprises patterning the surface of the workpiece by etching the surface of the workpiece using the resist pattern as a mask,
• wherein the resist cover film-forming material comprises a resin having an alicyclic skeleton at any of the main chain and the side chains;
• and the resist cover film-forming material itself is nonphotosensitive and is used for forming a resist cover film which covers a resist film when the resist film is subjected to liquid immersion exposure.

A semiconductor device manufactured by a process for manufacturing a semiconductor device, wherein the process for manufacturing a semiconductor device comprises the steps of:

• forming a resist pattern, and
• patterning,
• the forming a resist pattern comprises
• forming a resist film on a surface of a workpiece to be processed,
• forming a resist cover film on the resist film using a resist cover film-forming material,
• irradiating the resist film with exposure light through the resist cover film by liquid immersion exposure, and
• developing the resist film to thereby form a resist pattern;
• and
• the patterning comprises patterning the surface of the workpiece by etching the surface of the workpiece using the resist pattern as a mask,
• wherein the resist cover film-forming material comprises a resin having an alicyclic skeleton at any of the main chain and the side chains;
• and the resist cover film-forming material itself is nonphotosensitive and is used for forming a resist cover film which covers a resist film when the resist film is subjected to liquid immersion exposure.