Material for chemical vapor deposition and thin film forming method
AssigneeAdeka Corporation
InventorsMasaru Hosokawa, Masakatsu Matsushita, Satoshi Nakagawa
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Abstract
A material for chemical vapor deposition of the present invention contains a precursor composed of a metal compound, and has 100 or less particles having a size of 0.5 μm or more in 1 ml, in particle measurement by a light scattering type submerged particle detector in a liquid phase. A thin film can be prevented from being contaminated by particles even when a highly degradable metal compound is used as the precursor.
Claims11
A material for chemical vapor deposition comprising a precursor composed of a metal compound, wherein the material contains 100 or less particles having a size of 0.5 μm or more in 1 ml, in particle measurement by a light scattering type submerged particle detector in a liquid phase.
Dependencies are inferred from the claim text.