Mask-Pattern Determination Using Topology Types
AssigneeLuminescent Technologies, Inc.
InventorsDaniel Abrams, Christopher Ashton
Life of this patent
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Abstract
A method for determining a mask pattern is described. During the method, a first mask pattern that includes a plurality of second regions corresponding to the first regions of the photo-mask is provided. Then, a second mask pattern is determined based on the first mask pattern and differences between a target pattern and an estimate of a wafer pattern that results from the photolithographic process that uses at least a portion of the first mask pattern. Note that the determining includes different treatment for different types of regions in the target pattern, and the second mask pattern and the target pattern include pixilated images.
Claims28
A method for determining a mask pattern to be used on a photo-mask in a photolithographic process, comprising:
- determining a set of regions corresponding to different locations on a target pattern;
- representing a first mask pattern with a pixel based representation;
- determining a second mask pattern in accordance with the first mask pattern, the target pattern and a model of a photolithographic process, wherein the determining includes different treatment for different regions in the set of regions.
A method for determining a mask pattern to be used on a photo-mask in a photolithographic process, comprising:
- determining a set of regions corresponding to different locations on a target pattern;
- representing a first mask pattern with a pixel based representation;
- determining a second mask pattern in accordance with the first mask pattern, the target pattern and a model of a photolithographic process, wherein the determining is dependent upon at least one parameter, and wherein the value of the parameter is different for the different regions in the set of regions.
A computer-program product for use in conjunction with a computer system, the computer-program product comprising a computer-readable storage medium and a computer-program mechanism embedded therein for determining a mask pattern to be used on a photo-mask in a photolithographic process, the computer-program mechanism including:
- instructions for determining a set of regions corresponding to different locations on a target pattern;
- instructions for representing a first mask pattern with a pixel based representation;
- instructions for determining a second mask pattern in accordance with the first mask pattern, the target pattern and a model of a photolithographic process, wherein the determining is dependent upon at least one parameter, and wherein the value of the parameter is different for the different regions in the set of regions.
A computer system, comprising:
- at least one processor;
- at least one memory;
- and
- at least one program module, the program module stored in the memory and configured to be executed by the processor, wherein at least the program module is for determining a mask pattern to be used on a photo-mask in a photolithographic process, the program module including:
- instructions for determining a set of regions corresponding to different locations on a target pattern;
- instructions for representing a first mask pattern with a pixel based representation;
- instructions for determining a second mask pattern in accordance with the first mask pattern, the target pattern and a model of a photolithographic process, wherein the determining is dependent upon at least one parameter, and wherein the value of the parameter is different for the different regions in the set of regions.
A method for determining a write pattern to be used by a write device in a semiconductor-manufacturing process, comprising:
- determining a set of regions corresponding to different locations on a target pattern;
- representing a first pattern with a pixel based representation;
- determining a second pattern in accordance with the first pattern, the target pattern and a model of a photolithographic process, wherein the determining is dependent upon at least one parameter, and wherein the value of the parameter is different for the different regions in the set of regions.
A photo-mask for use in a photolithographic process, wherein a mask pattern to which the photo-mask corresponds is determined in a process including the operations of:
- determining a set of regions corresponding to different locations on a target pattern;
- representing a first mask pattern with a pixel based representation;
- determining a second mask pattern in accordance with the first mask pattern, the target pattern and a model of a photolithographic process, wherein the determining is dependent upon at least one parameter, and wherein the value of the parameter is different for the different regions in the set of regions.
A semiconductor wafer, wherein the semiconductor wafer is produced in a photo-lithographic process that includes a photo-mask, wherein a mask pattern to which the photo-mask corresponds is determined in a process including the operations of:
- determining a set of regions corresponding to different locations on a target pattern;
- representing a first mask pattern with a pixel based representation;
- determining a second mask pattern in accordance with the first mask pattern, the target pattern and a model of a photolithographic process, wherein the determining is dependent upon at least one parameter, and wherein the value of the parameter is different for the different regions in the set of regions.
A semiconductor wafer, wherein the semiconductor wafer is produced in a semiconductor-manufacturing process that includes a write device using a write pattern, wherein the write pattern is determined in a process including the operations of:
- determining a set of regions corresponding to different locations on a target pattern;
- representing a first pattern with a pixel based representation;
- determining a second pattern in accordance with the first pattern, the target pattern and a model of a photolithographic process, wherein the determining is dependent upon at least one parameter, and wherein the value of the parameter is different for the different regions in the set of regions.
A data file stored in a computer-readable memory, comprising information corresponding to a mask pattern, wherein the mask pattern corresponds to a photo-mask that is to print a wafer pattern in a semiconductor-manufacturing process, wherein the mask pattern is determined in a process that includes the operations of:
- determining a set of regions corresponding to different locations on a target pattern;
- representing a first pattern with a pixel based representation;
- determining a second pattern in accordance with the first pattern, the target pattern and a model of a photolithographic process, wherein the determining is dependent upon at least one parameter, and wherein the value of the parameter is different for the different regions in the set of regions.
A data file stored in a computer-readable memory, comprising information corresponding to a write pattern, wherein the write pattern is to print a wafer pattern in a semiconductor-manufacturing process, wherein the write pattern is determined in a process that includes the operations of:
- determining a set of regions corresponding to different locations on a target pattern;
- representing a first pattern with a pixel based representation;
- determining a second pattern in accordance with the first pattern, the target pattern and a model of a photolithographic process, wherein the determining is dependent upon at least one parameter, and wherein the value of the parameter is different for the different regions in the set of regions.
Dependencies are inferred from the claim text.