Composition for forming a photosensitive organic anti-reflective layer and method of forming a pattern using the same
AssigneesSamsung Electronics Co., Ltd., Seoul National University Industry Foundation
InventorsSang-Woong Yoon, Jong-Chan Lee, Ki-Ok Kwon, Sang-Ho Cha, Geun Huh
Life of this patent
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Abstract
A composition for forming a photosensitive organic anti-reflective layer includes about 0.5 to about 5 percent by weight of an acid-labile thermal cross-linking agent that is decomposed by an epoxy group and a photo-acid generator, about 10 to about 22 percent by weight of a copolymer resin that includes an acrylate monomer containing anthracene or a methacrylate monomer containing anthracene, about 0.1 to about 1 percent by weight of a photo-acid generator, and a solvent.
Claims11
A composition for forming a photosensitive organic anti-reflective layer, comprising:
- about 0.5 to about 5 percent by weight of an acid-labile thermal cross-linking agent that is decomposed by an epoxy group and a photo-acid generator;
- about 10 to about 22 percent by weight of a copolymer resin that includes an acrylate monomer containing anthracene or a methacrylate monomer containing anthracene;
- about 0.1 to about 1 percent by weight of a photo-acid generator;
- and
- a solvent.
A method of patterning a layer, comprising:
- forming a photosensitive organic anti-reflective layer by coating a composition on a layer, the composition including about 0.5 to about 5 percent by weight of an acid-labile thermal cross-linking agent that is decomposed by an epoxy group and a photo-acid generator, about 10 to about 22 percent by weight of a copolymer resin that includes an acrylate monomer containing anthracene or a methacrylate monomer containing anthracene, about 0.1 to about 1 percent by weight of a photo-acid generator, and a solvent;
- forming a photoresist film on the photosensitive organic anti-reflective layer;
- simultaneously exposing the photoresist film and the photosensitive organic anti-reflective layer;
- developing the exposed photoresist film and the exposed photosensitive organic anti-reflective layer using a developing solution to form a photoresist pattern and a photosensitive organic anti-reflective layer pattern;
- and
- etching the layer using the photoresist pattern as a mask.
Dependencies are inferred from the claim text.