Photomask, pattern formation method using the same and mask data creation method
AssigneePanasonic Corporation
InventorAkio Misaka
Life of this patent
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Abstract
A principal pattern made of a plurality of isolated transparent portions is formed in a light-shielding portion disposed on a transparent substrate having a transparent property against exposing light. The principal pattern includes a first principal pattern and a second principal pattern adjacent to each other at a given distance, and a first auxiliary pattern made of a phase shifter portion for transmitting the exposing light in an opposite phase to the exposing light passing through the transparent portion is formed between the first principal pattern and the second principal pattern.
Claims50
A photomask comprising a principal pattern made of a plurality of isolated transparent portions and formed in a light-shielding portion disposed on a transparent substrate having a transparent property against exposing light,
- wherein said principal pattern includes a first principal pattern and a second principal pattern adjacent to each other at a given distance, and
- a first auxiliary pattern made of a phase shifter portion for transmitting the exposing light in an opposite phase to the exposing light passing through said transparent portion is formed between said first principal pattern and said second principal pattern.
A photomask comprising a principal pattern made of a plurality of isolated transparent portions and formed in a light-shielding portion disposed on a transparent substrate having a transparent property against exposing light,
- wherein said principal pattern includes a first principal pattern, a second principal pattern adjacent to said first principal pattern at a first distance and a third principal pattern adjacent to said first principal pattern at a second distance larger than said first distance,
- an auxiliary pattern made of a semi-light-shielding portion for partially transmitting the exposing light in the same phase to the exposing light passing through said transparent portion is formed between said first principal pattern and said third principal pattern, and
- an auxiliary pattern made of the semi-light-shielding portion is not formed between said first principal pattern and said second principal pattern.
A photomask comprising a principal pattern made of a plurality of isolated transparent portions and formed in a light-shielding portion disposed on a transparent substrate having a transparent property against exposing light,
- wherein said principal pattern includes a first principal pattern, a second principal pattern adjacent to said first principal pattern at a first distance and a third principal pattern adjacent to said first principal pattern at a second distance larger than said first distance,
- a first auxiliary pattern made of a phase shifter portion for transmitting the exposing light in an opposite phase to the exposing light passing through said transparent portion is formed between said first principal pattern and said second principal pattern, and
- an auxiliary pattern made of the phase shifter portion is not formed between said first principal pattern and said third principal pattern.
A photomask comprising at least two or more principal patterns made of a plurality of isolated transparent portions and formed in a light-shielding portion disposed on a transparent substrate having a transparent property against exposing light,
- wherein said light-shielding portion surrounds said principal patterns,
- a semi-light-shielding portion for partially transmitting the exposing light in the same phase to the exposing light passing through said transparent portion is provided so as to surround an outline of said light-shielding portion, and
- at least one auxiliary pattern having a transparent property against the exposing light is provided between said principal patterns so as to be surrounded with said light-shielding portion.
A photomask comprising a principal pattern made of a plurality of isolated reflection portions for reflecting exposing light and formed in a non-reflection portion disposed on a substrate,
- wherein said principal pattern includes a first principal pattern and a second principal pattern adjacent to each other at a given distance, and
- a first auxiliary pattern made of a phase shifter portion for reflecting the exposing light in an opposite phase to the exposing light reflected by said reflection portion is formed between said first principal pattern and said second principal pattern.
A photomask comprising a principal pattern made of a plurality of isolated reflection portions for reflecting exposing light and formed in a non-reflection portion disposed on a substrate,
- wherein said principal pattern includes a first principal pattern, a second principal pattern adjacent to said first principal pattern at a first distance and a third principal pattern adjacent to said first principal pattern at a second distance larger than said first distance,
- an auxiliary pattern made of a semi-reflection portion for partially reflecting the exposing light in the same phase to the exposing light reflected by said reflection portion is formed between said first principal pattern and said third principal pattern, and
- an auxiliary pattern made of the semi-reflection portion is not formed between said first principal pattern and said second principal pattern.
A photomask comprising a principal pattern made of a plurality of isolated reflection portions for reflecting exposing light and formed in a non-reflection portion disposed on a substrate,
- wherein said principal pattern includes a first principal pattern, a second principal pattern adjacent to said first principal pattern at a first distance and a third principal pattern adjacent to said first principal pattern at a second distance larger than said first distance,
- a first auxiliary pattern made of a phase shifter portion for reflecting the exposing light in an opposite phase to the exposing light reflected by said reflection portion is formed between said first principal pattern and said second principal pattern, and
- an auxiliary pattern made of the phase shifter portion is not formed between said first principal pattern and said third principal pattern.
A photomask comprising at least two or more principal patterns made of a plurality of isolated reflection portions for reflecting exposing light and formed in a non-reflection portion disposed on a substrate,
- wherein said non-reflection portion surrounds said principal patterns,
- a semi-reflection portion for partially reflecting the exposing light in the same phase to the exposing light reflected by said reflection portion is provided so as to surround an outline of said non-reflection portion, and
- at least one auxiliary pattern having a reflecting property against the exposing light is provided between said principal patterns so as to be surrounded with said non-reflection portion.
A mask data creation method for setting, in a photomask for use in exposure, an exposed region for transmitting or reflecting exposing light and an unexposed region for neither transmitting nor reflecting the exposing light, comprising the steps of:
- (a) setting, as principal patterns of said exposed region, a plurality of regions corresponding to desired exposed portions of a resist formed by irradiating said resist with the exposing light through said photomask;
- (b) setting a background of said photomask as said unexposed region;
- and
- (c) setting, as an auxiliary pattern having an opposite phase, a region in an opposite phase relationship with said principal patterns in a portion where a distance between said plurality of regions set as said principal patterns is not more than a first distance.
A mask data creation method for setting, in a photomask for use in exposure, an exposed region for transmitting or reflecting exposing light and an unexposed region for neither transmitting nor reflecting the exposing light, comprising the steps of:
- (a) setting, as principal patterns of said exposed region, a plurality of regions corresponding to desired exposed portions of a resist formed by irradiating said resist with the exposing light through said photomask;
- (b) setting a background of said photomask as a semi-light-shielding pattern or a semi-reflection pattern that has transmittance or reflectance of 3% or more and 20% or less against the exposing light with respect to said principal patterns and corresponds to a part of said exposed region;
- (c) setting a light-shielding pattern or a non-reflection pattern as said unexposed region for surrounding said principal patterns;
- and
- (d) setting, as an auxiliary pattern having an opposite phase, a region in an opposite phase relationship with said principal patterns in a portion where a distance between said plurality of regions set as said principal patterns is not more than a first distance.
Dependencies are inferred from the claim text.