Photomask, pattern formation method using photomask and mask data creation method
AssigneeMatsushita Electric Industrial Co., Ltd.
InventorAkio Misaka
Life of this patent
Estimating the term…
Abstract
A mask pattern includes a main pattern to be transferred through exposure and an auxiliary pattern that diffracts exposing light and is not transferred through the exposure. The main pattern is made from a shielding portion, a phase shifter or a combination of a semi-shielding portion or a shielding portion and a phase shifter. The auxiliary pattern is made from a shielding portion or a semi-shielding portion. The auxiliary pattern is disposed in a position away from the main pattern by a distance M×(λ/(2×sin φ)) or M×((λ/(2×sin φ))+(λ/(NA+sin φ))), wherein λ indicates a wavelength of the exposing light, M and NA indicate magnification and numerical aperture of a reduction projection optical system of an aligner and φ indicates an oblique incident angle.
Claims31
1-65. (canceled)
A pattern formation method using a photomask having a mask pattern formed on a transparent substrate and a transparent portion of said transparent substrate where said mask pattern is not formed, the pattern formation method comprising the steps of:
- (a) forming a resist film on a substrate;
- (b) irradiating said resist film with said exposing light through said photomask;
- and
- (c) forming a resist pattern by developing said resist film having been irradiated with said exposing light,
- wherein in said photomask, said mask pattern includes a main pattern to be transferred through exposure and an auxiliary pattern that diffracts exposing light and is not transferred through the exposure,
- said main pattern is composed of a first semi-shielding portion that has first transmittance for partially transmitting said exposing light and transmits said exposing light in an identical phase with respect to said transparent portion, and a phase shifter that transmits said exposing light in an opposite phase with respect to said transparent portion,
- said auxiliary pattern is made from a second semi-shielding portion that has second transmittance for partially transmitting said exposing light and transmits said exposing light in the identical phase with respect to said transparent portion, and
- a pattern width of said auxiliary pattern is smaller than that of said main pattern.
A pattern formation method using a photomask having a mask pattern formed on a transparent substrate and a transparent portion of said transparent substrate where said mask pattern is not formed, the pattern formation method comprising the steps of:
- (a) forming a resist film on a substrate;
- (b) irradiating said resist film with said exposing light through said photomask;
- and
- (c) forming a resist pattern by developing said resist film having been irradiated with said exposing light,
- wherein in said photomask, said mask pattern includes a main pattern to be transferred through exposure and an auxiliary pattern that diffracts exposing light and is not transferred through the exposure,
- said main pattern is composed of a first semi-shielding portion that has first transmittance for partially transmitting said exposing light and transmits said exposing light in an identical phase with respect to said transparent portion, and a phase shifter that transmits said exposing light in an opposite phase with respect to said transparent portion,
- said auxiliary pattern includes a first auxiliary pattern that has a width D1 and is disposed with a part of said transparent portion sandwiched between said main pattern and said first auxiliary pattern and a second auxiliary pattern that has a width D2 and is disposed on a side of said first auxiliary pattern farther from said main pattern with a part of said transparent portion sandwiched between said first auxiliary pattern and said second auxiliary pattern, and
- said width D2 is larger than said width D1.
Dependencies are inferred from the claim text.