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US 2007/0184355 A1Published application
Cross-shaped sub-resolution assist feature
AssigneeIntel Corporation
InventorsCharles Wallace, Swaminathan Sivakumar, Shannon Daviess
Life of this patent
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Abstract
Cross-shaped sub-resolution assist features may be utilized to print lithographic patterns in semiconductor fabrication processes. The crosses may be isolated structures or may be part of a grid arrangement. The main features, such as contacts, may be positioned on the mask so as to be intersected by the cross-shaped sub-resolution assist features. In some embodiments, the cross-shaped sub-resolution assist features may intersect the main feature at its center point in both the x and y directions.
Claims20
A method comprising:
- using a cross-shaped sub-resolution assist feature to print a semiconductor pattern.
A lithographic mask comprising:
- a plurality of main features;
- and
- a cross-shaped sub-resolution assist feature joining at least two of said main features.
A lithographic mask comprising:
- a first linear sub-resolution assist feature;
- and
- a second linear sub-resolution assist feature intersecting and perpendicularly to said first linear sub-resolution assist feature.
Dependencies are inferred from the claim text.