Semiconductor memory device controlling program voltage according to the number of cells to be programmed and method of programming the same
AssigneeSamsung Electronics Co., Ltd.
InventorSeung-Won Lee
Life of this patent
Estimating the term…
Abstract
A semiconductor memory device controlling a program voltage according to the number of cells to be programmed and a method of programming the same. The semiconductor memory device includes a memory cell array. A write data buffer receives write data in a predetermined unit. A program cell counter calculates the amount of data, from the write data, to be programmed in the memory cell array. A program voltage generator outputs a program voltage to be applied to the memory cell array, in accordance with the amount of data to be programmed, at a time, in the memory cell array. The program voltage is controlled in accordance with the number of memory cells to be programmed.
Claims20
A semiconductor memory device comprising:
- a memory cell array;
- and
- a program voltage generator outputting a different level of program voltage to the memory cell array depending upon the number of memory cells to be programmed at a time.
A semiconductor memory device comprising:
- a memory cell array;
- a write data buffer receiving write data in a predetermined unit;
- a program cell counter calculating an amount of data, from the write data, to be programmed in the memory cell array;
- and
- a program voltage generator outputting a different level of program voltage to be applied to the memory cell array, depending upon the amount of data to be programmed at a time.
A method of programming a semiconductor memory device, comprising:
- receiving write data in a predetermined unit;
- counting the amount of data, from the write data, to be programmed in a memory cell array;
- and
- adjusting a program voltage applied to the memory cell array to a different level depending upon the amount of data to be programmed at a time.
Dependencies are inferred from the claim text.