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US 2007/0182521 A1Published application
High performance system-on-chip inductor using post passivation process
AssigneeMegica Corporation
InventorMou-Shiung Lin
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Abstract
A system and method for forming post passivation inductors, and related structures, is described. High quality electrical components, such as inductors and transformers, are formed on a layer of passivation, or on a thick layer of polymer over a passivation layer.
Claims34
A circuit component comprising:
- a silicon substrate:
- a metallization structure over said silicon substrate;
- a passivation layer over said metallization structure;
- a first polymer layer over said passivation layer, wherein said first polymer layer comprises polyimide and has a thickness of between 2 and 150 micrometers, wherein said first polymer layer has a thickness thicker than that of said passivation layer,
- a coil on said first polymer layer, wherein said coil comprises a titanium-containing layer, a first gold layer on said titanium-containing layer and a second gold layer on said first gold layer, wherein said titanium-containing layer has a thickness of between 500 and 5000 angstroms, said first gold layer has a thickness of between 300 and 3000 angstroms, said second gold layer has a thickness of between 1 and 20 micrometers;
- and
- a second polymer layer on said coil.
4 more elements
A circuit component comprising:
- a silicon substrate:
- a metallization structure over said silicon substrate;
- a passivation layer over said metallization structure;
- and
- a coil over said passivation layer, wherein said coil comprises a gold layer having a thickness of between 1 and 20 microns.
2 more elements
A circuit component comprising:
- a semiconductor substrate;
- a metallization structure over said semiconductor substrate;
- a passivation layer over said metallization structure;
- and
- a coil over said passivation layer, wherein no transistor is under said coil.
2 more elements
Dependencies are inferred from the claim text.