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US 2007/0181969 A1Published application
Semiconductor memory device and method of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorsKwang-duk Kim, Jong-hyun Ahn, Jeong-ho Shin
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Abstract
A semiconductor memory device having an improved fuse structure may include an interlayer insulating film on a semiconductor substrate, an opening in the interlayer insulating film, a vertical fuse that may conform to the opening, a fuse insulating film on the vertical fuse that may fill the opening, and metal wiring lines that may be electrically connected to the vertical fuse.
Claims22
A semiconductor memory device, comprising:
- an interlayer insulating film on a semiconductor substrate;
- an opening in the interlayer insulating film;
- a vertical fuse conforming to the opening;
- a fuse insulating film on the vertical fuse, the fuse insulating film filling the opening;
- and
- a metal wiring line electrically connected to the vertical fuse.
3 more elements
A method of fabricating a semiconductor memory device, the method comprising:
- forming an interlayer insulating film on a semiconductor substrate;
- forming an opening in the interlayer insulating film;
- forming a conductive film on the opening and the interlayer insulating film, the conductive film conforming to the opening and the interlayer insulating film;
- forming a fuse insulating film on the conductive film to fill the opening;
- forming a vertical fuse in the opening by removing the conductive film and the fuse insulating film on the interlayer insulating film;
- and
- forming a metal wiring line that electrically connects to the vertical fuse.
4 more elements
Dependencies are inferred from the claim text.