Semiconductor device and method of manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorBo-sung Kim
Life of this patent
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Abstract
Provided are a semiconductor device which substantially prevents repair failure and a method of manufacturing the same. The semiconductor device includes a plurality of first fuses formed apart from each other on a semiconductor substrate, and on which a protective layer is formed; a first insulating layer filled in between the first fuses and configured to expose the protective layer; a plurality of second fuses formed between the first fuses and on the first insulating layer; and a second insulating layer formed on the first insulating layer, wherein the second insulating layer includes a fuse window configured to fully expose the second fuses and the protective layer formed on the first fuses.
Claims20
A semiconductor device comprising:
- a plurality of first fuses formed apart from each other on a semiconductor substrate, and a protective layer formed on the plurality of first fuses;
- a first insulating layer filled in between the first fuses and configured to expose the protective layer;
- a plurality of second fuses formed between the first fuses and on the first insulating layer;
- and
- a second insulating layer formed on the first insulating layer, wherein the second insulating layer includes a fuse window configured to fully expose the second fuses and the protective layer formed on the first fuses.
A semiconductor device comprising:
- a plurality of first fuses formed apart from each other on a semiconductor substrate;
- a protective layer conformally formed on the semiconductor substrate on which the first fuses are formed;
- a first insulating layer filled in between the first fuses and configured to expose the protective layer on the first fuses;
- a plurality of second fuses formed between the first fuses and on the first insulating layer;
- and
- a second insulating layer formed on the first insulating layer, wherein the second insulating layer includes a fuse window configured to fully expose the second fuses and the protective layer formed on the first fuses.
A method of fabricating a semiconductor device, the method comprising:
- forming on a semiconductor substrate a plurality of first fuses disposed apart from each other and forming a protective layer on the first fuses;
- forming a first insulating layer which covers the first fuses;
- forming a plurality of second fuses on the first insulating layer between the first fuses;
- forming a second insulating layer which covers the second fuses;
- and
- sequentially etching the second insulating layer and the first insulating layer, whereby a fuse window is formed that exposes the second fuses and the protective layer formed on the first fuses.
A method of fabricating a semiconductor device, the method comprising:
- forming a plurality of first fuses disposed apart from each other;
- conformally forming a protective layer on the semiconductor substrate on which the first fuses are formed;
- forming a first insulating layer on the protective layer;
- forming a plurality of second fuses between the first fuses on the first insulating layer;
- forming a second insulating layer which covers the second fuses;
- and
- sequentially etching the second insulating layer and the first insulating layer, whereby a fuse window is formed d fuses and the protective layer on the first fuses.
Dependencies are inferred from the claim text.