Magnetic memory, a method of manufacturing the same, and semiconductor integrated circuit apparatus
AssigneeSony Corporation
InventorMitsuharu Shoji
Life of this patent
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Abstract
A magnetic memory includes a magnetic tunneling junction element having a reference layer, a tunnel barrier layer and a recording layer laminated in order, information being written to the recording layer in accordance with spin injection magnetization reversal caused by a current, information written to the recording layer being read out using a current. The magnetic tunneling junction element is disposed on a plug connected to a selection transistor, and a sidewall insulating film covering a side portion of the recording layer of the magnetic tunneling junction element is formed.
Claims5
A magnetic memory including a magnetic tunneling junction element having a reference layer, a tunnel barrier layer and a recording layer laminated in order, information being written to said recording layer in accordance with spin injection magnetization reversal caused by a current, information written to said recording layer being read out using a current,
- wherein said magnetic tunneling junction element is disposed on a plug connected to a selection transistor, and a sidewall insulating film covering a side portion of said recording layer of said magnetic tunneling junction element is formed.
A method of manufacturing a magnetic memory including a magnetic tunneling junction element having a reference layer, a tunnel barrier layer and a recording layer laminated in order, information being written to said recording layer, magnetization free layer, in accordance with spin injection magnetization reversal caused by a current, information written to said recording layer, magnetization free layer, being read out using a current, for the magnetic tunneling junction element, said method comprising the steps of:
- laminating a formation layer intended to become a reference layer, a formation layer intended to become a tunnel barrier layer and a formation layer intended to become a recording layer in order on a plug connected to a selection transistor;
- processing said formation layer intended to become a recording layer into a recording layer of said magnetic tunneling junction element;
- forming a sidewall insulating film covering a side portion of said recording layer;
- and
- processing said formation layer intended to become a tunnel barrier layer and said formation layer intended to become a reference layer by using said sidewall insulating film as a mask into a tunnel barrier layer and a reference layer of said magnetic tunneling junction element.
A semiconductor integrated circuit apparatus having a magnetic memory installed,
- wherein said magnetic memory includes a magnetic tunneling junction element having a reference layer, a tunnel barrier layer and a recording layer laminated in order, information being written to said recording layer in accordance with spin injection magnetization reversal caused by a current, information written to said recording layer being read out using a current;
- said magnetic tunneling junction element is disposed on a plug connected to a selection transistor;
- and
- a sidewall insulating film covering a side portion of said recording layer of said magnetic tunneling junction element is formed.
Dependencies are inferred from the claim text.