Semiconductor device having gate-all-around structure and method of fabricating the same

Abstract

Semiconductor devices having a gate-all-around (GAA) structure capable of higher operating performance may be provided. A semiconductor device may include a semiconductor substrate, at least one gate electrode, and at least one gate insulating layer. The semiconductor substrate may have a body, at least one supporting post protruding from the body, and at least one pair of fins separated from the body, wherein both ends of each fin of the at least one pair of fins are connected to and supported by the at least one supporting post. The at least one gate electrode may enclose a portion of at least one fin of the at least one pair of fins of the semiconductor substrate, and may be insulated from the semiconductor substrate. The at least one gate insulating layer may be interposed between the at least one gate electrode and the at least one pair of fins of the semiconductor substrate.

Dependencies are inferred from the claim text.