Back to results
US 2007/0181958 A1Published application
Semiconductor device and method of forming the same
AssigneeSamsung Electronics Co., Ltd.
InventorHyuck-Chai JUNG
Life of this patent
Estimating the term…
Abstract
A semiconductor device such as a Static Random Access Memory (SRAM) cell includes an access transistor. A drain of the access transistor includes a first N-type impurity and a second N-type impurity. The diffusion coefficient of the first N-type impurity is smaller than the diffusion coefficient of the second N-type impurity. By providing a drain as described above, hot carrier effects within the access transistor may be minimized.
Claims20
A semiconductor device, comprising:
- a substrate having an active region;
- a first impurity region and a second impurity region in the active region;
- an access gate insulating layer and an access gate electrode stacked on the active region between the first and second impurity regions;
- an interlayer dielectric on the access gate electrode;
- and
- a bit line on the interlayer dielectric and electrically connected to the first impurity region,
- wherein the first impurity region includes a first N-type impurity and a second N-type impurity, the second impurity region includes the first N-type impurity and a diffusion coefficient of the first N-type impurity is smaller than a diffusion coefficient of the second N-type impurity.
4 more elements
A method of forming a semiconductor device, the method comprising:
- forming an access gate insulating layer and access gate electrode on an active region of a substrate;
- forming a first impurity region and a second impurity region in the active region on either side of the access gate electrode;
- forming an interlayer dielectric on the access gate electrode;
- and
- forming a bit line on the interlayer dielectric, the bit line being electrically connected to the first impurity region,
- wherein the first impurity region includes a first N-type impurity and a second N-type impurity, the second impurity region includes the first N-type impurity, and a diffusion coefficient of the first N-type impurity is smaller than a diffusion coefficient of the second N-type impurity.
3 more elements
Dependencies are inferred from the claim text.