Semiconductor device having stacked transistors and method for manufacturing the same
AssigneeSamsung Electronics Co., Ltd.
InventorsSung-Jin KIM, Seung-Hyun PARK, Sang-Jong KIM, Ryu-Tan CHOI
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Abstract
Provided is a semiconductor device including a thin film transistor with at least one protruding impurity region and a method for manufacturing the same. The semiconductor device includes bulk transistors formed on a semiconductor substrate and an interlayer insulation layer covering the bulk transistor. At least one thin film transistor is formed on the interlayer insulation layer including impurity regions adjacent thereto. At least one impurity region of the thin film transistor protrudes higher than the other impurity region.
Claims26
A semiconductor device having stacked transistors, comprising:
- a bulk transistor formed on a semiconductor substrate, the bulk transistor having first impurity regions;
- a first interlayer insulation layer overlying the bulk transistor;
- a semiconductor layer pattern on the first interlayer insulation layer;
- and
- a thin film transistor formed on the semiconductor layer pattern, the thin film transistor having second impurity regions, at least one of the second impurity regions protruding higher above the first interlayer insulation layer than another second impurity region.
A semiconductor device having stacked transistors, comprising:
- bulk transistors formed on a semiconductor substrate, the bulk transistors having first impurity regions;
- a first interlayer insulation layer formed on the semiconductor substrate having the bulk transistors;
- first epitaxial plugs connected to respectively opposite first impurity regions of adjacent bulk transistors through the first interlayer insulation layer, and having top portions that protrude from the surface of the first interlayer insulation layer;
- a semiconductor layer pattern formed on the first interlayer insulation layer and contacting the first epitaxial plugs;
- and
- thin film transistors formed on the semiconductor layer pattern, and having second impurity regions.
A semiconductor device having stacked transistors, comprising:
- bulk transistors disposed on a semiconductor substrate, the bulk transistors having first impurity regions;
- a first interlayer insulation layer overlying the bulk transistors;
- first epitaxial plugs connected to respectively opposite first impurity regions of adjacent bulk transistors through the first interlayer insulation layer, and having top portions that protrude from the surface of the first interlayer insulation layer;
- a first semiconductor layer pattern disposed on the first interlayer insulation layer and contacting the first epitaxial plugs;
- first thin film transistors disposed on the first semiconductor layer pattern, and having second impurity regions disposed on both sides thereof;
- a second interlayer insulation layer disposed on the semiconductor substrate and the first thin film transistors;
- second epitaxial plugs connected to respectively opposite second impurity regions of adjacent first thin film transistors through the second interlayer insulation layer, and having top portions that protrude from the surface of the second interlayer insulation layer;
- a second semiconductor layer pattern disposed on the second interlayer insulation layer and contacting the second epitaxial plugs;
- and
- second thin film transistors disposed on the second semiconductor layer pattern, and having third impurity regions disposed on both sides thereof.
A method for manufacturing a semiconductor device having stacked transistors, the method comprising:
- forming bulk transistors on a semiconductor substrate, the bulk transistors having first impurity regions;
- forming a first interlayer insulation layer overlying the bulk transistors;
- selectively etching the first interlayer insulation layer to form at least one contact hole exposing at least one of the first impurity regions;
- forming at least one first epitaxial plug filling the at least one contact hole;
- removing an upper portion of the first interlayer insulation layer to protrude the top portion of the at least one first epitaxial plug above the top surface of a remaining portion of the first interlayer insulation layer;
- forming a semiconductor layer pattern on the first interlayer insulation layer and contacting the at least one first epitaxial plug;
- and
- forming first thin film transistors on the semiconductor layer pattern, the first thin film transistors having second impurity regions.
Dependencies are inferred from the claim text.