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US 2007/0181948 A1Published application
ESD protection device
OwnerChorng-Wei Liaw, Ming-Jang Lin +1inventors
InventorsChorng-Wei Liaw, Ming-Jang Lin, Wei-Jye Lin
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Abstract
The junction breakdown voltage of an ESD protection device is adjusted by altering the distance between two diffusion regions of opposite conductivity types.
Claims15
An ESD protection device, comprising:
- a substrate of a first conductivity type having a well of said first conductivity type;
- a first high concentration diffusion region of said first conductivity type, a second high concentration diffusion region of a second conductivity type opposite to said first conductivity type, a third high concentration diffusion region of said second conductivity type, and a fourth high concentration diffusion region of said first conductivity type, all in said well;
- a first conductive layer electrically connecting to said first and second high concentration diffusion regions;
- and
- a second conductive layer electrically connecting to said third high concentration diffusion region;
- wherein said third and fourth high concentration diffusion regions are spaced with therebetween a distance to adjust a breakdown voltage of said ESD protection device.
3 more elements
An ESD protection device, comprising:
- a substrate of a first conductivity type having a well of said first conductivity type;
- a first high concentration diffusion region of said first conductivity type, a second high concentration diffusion region of a second conductivity type opposite to said first conductivity type, a third high concentration diffusion region of said second conductivity type, and a fourth high concentration diffusion region of said first conductivity type, all in said well;
- a gate above a channel between said second and third high concentration regions;
- a first conductive layer electrically connecting to said first and second high concentration diffusion regions;
- and
- a second conductive layer electrically connecting to said third high concentration diffusion region;
- wherein said third and fourth high concentration diffusion regions are spaced with therebetween a distance to adjust a breakdown voltage of said ESD protection device.
4 more elements
An ESD protection device, comprising:
- a substrate of a first conductivity type;
- an epitaxial layer of a second conductivity type opposite to said first conductivity type on said substrate;
- a first diffusion region of said first conductivity type and a second diffusion region of said second conductivity type both in said epitaxial layer;
- a third diffusion region of said second conductivity type in said first diffusion region;
- and
- a fourth diffusion region of said second conductivity type extending from said second diffusion region to a portion of said epitaxial layer between said first and second diffusion regions;
- wherein said first and fourth diffusion regions are spaced with therebetween a distance to adjust a breakdown voltage of said ESD protection device.
4 more elements
An ESD protection device, comprising:
- a substrate of a first conductivity type having a first well of said first conductivity type and a second well of a second conductivity type opposite to said first conductivity type, both adjacent to each other;
- a first high concentration diffusion region of said first conductivity type in said first well;
- and
- a second high concentration diffusion region of said second conductivity type in said second well;
- wherein said first and second high concentration diffusion regions are spaced with therebetween a distance to adjust a breakdown voltage of said ESD protection device.
2 more elements
Dependencies are inferred from the claim text.