Method and apparatus for forming a semiconductor-on-insulator (SOI) body-contacted device

A semiconductor device comprising:

• an insulator layer;
• a semiconductor layer formed on top of the insulator layer;
• a plurality of first active regions and a plurality of second active regions patterned on the semiconductor layer, wherein each of the plurality of first active regions is of a different height from each of the plurality second active regions, and wherein at least a portion of each of the plurality of first active regions has a first conductivity type and at least a portion of each of the plurality of second active regions has a second conductivity type different from the first conductivity type in at least a channel region of the semiconductor device;
• a gate structure formed over at least a portion of the plurality of first active region and the plurality of second active regions;
• and
• at least one contact formed in the plurality of second active regions for electrically connecting to a plurality of body regions located under the gate structure.

A semiconductor device comprising:

• an insulator layer;
• a semiconductor layer formed on top of the insulator layer;
• a first active region and a second active region patterned on the semiconductor layer, wherein the first active region is of a different height from the second active region, and wherein at least a portion of the first active region has a first conductivity type and at least a portion of the second active region has a second conductivity type different from the first conductivity type in at least a channel region of the semiconductor device;
• a gate structure formed over at least a portion of the first active region and the second active region;
• and
• a contact for a body region, wherein the body region is located in the first active region under the gate structure, and wherein the contact is provided from more than two sides of the body region.