Semiconductor devices and methods of fabricating the same
AssigneeSamsung Electronics Co., Ltd.
InventorSung-Hoon Ko
Life of this patent
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Abstract
A semiconductor device includes a semiconductor substrate, a storage pad and a bit line pad on the semiconductor substrate, a first interlayer insulating layer covering the bit line pad and including a bit line contact hole having a width greater than a width of the bit line pad, a barrier insulating layer on sidewalls of the first interlayer insulating layer and upper portions of sidewalls of the bit line pad that are exposed by the bit line contact hole, a bit line plug in the bit line contact hole and on the barrier insulating layer; and a storage plug penetrating the first interlayer insulating layer and contacting the storage pad.
Claims20
A semiconductor device, comprising:
- a semiconductor substrate;
- a storage pad and a bit line pad on the semiconductor substrate;
- a first interlayer insulating layer covering the bit line pad and including a bit line contact hole having a width greater than a width of the bit line pad;
- a barrier insulating layer on sidewalls of the first interlayer insulating layer and upper portions of sidewalls of the bit line pad that are exposed by the bit line contact hole;
- a bit line plug in the bit line contact hole and on the barrier insulating layer;
- and
- a storage plug penetrating the first interlayer insulating layer and contacting the storage pad.
A method of fabricating a semiconductor device, the method comprising:
- forming a storage pad and a bit line pad on a semiconductor substrate;
- forming a first interlayer insulating layer covering the storage pad and the bit line pad;
- etching a portion of the first interlayer insulating layer on the bit line pad to form a bit line contact hole having a width greater than a width of the bit line pad and exposing an upper surface and upper portions of sidewalls of the bit line pad;
- forming a barrier insulating layer covering sidewalls of the first interlayer insulating layer and the upper portions of the sidewalls of the bit line pad that are exposed in the bit line contact hole;
- forming a bit line plug filling the bit line contact hole in which the barrier insulating layer is formed;
- and
- forming a storage plug penetrating the first interlayer insulating layer and contacting the storage pad.
Dependencies are inferred from the claim text.