Schottky diode structure with enhanced breakdown voltage and method of manufacture
AssigneeSemiconductor Components Industries, LLC
InventorAntonin Rozsypal
Life of this patent
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Abstract
In one embodiment, a Schottky diode structure comprises a Schottky barrier layer in contact with a semiconductor material through a Schottky contact opening. A conductive ring is formed adjacent the Schottky contact opening and is separated from the semiconductor material by a thin insulating layer. Another insulating layer is formed overlying the structure, and a contact opening is formed therein. The contact opening is wider than the Schottky contact opening and exposes portions of the conductive ring. A Schottky barrier metal is formed in contact with the semiconductor material through the Schottky contact opening, and is formed in further+contact with the conductive ring.
Claims20
A Schottky diode structure comprising:
- a region of semiconductor material having a first major surface;
- a conductive plate formed overlying the first major surface and separated from the first major surface by a first insulating layer;
- and
- a metal layer contacting the region of semiconductor material to form a Schottky barrier, the metal further contacting horizontal and vertical surfaces of the conductive plate.
A Schottky barrier structure comprising:
- a semiconductor region of a first conductivity type having a first major surface;
- a first insulating layer formed overlying the first major surface;
- a conductive ring formed overlying the first insulating layer;
- a first opening formed through the conductive layer and the first insulating layer to provide a Schottky contact opening;
- a second insulating layer formed overlying the conductive layer;
- a contact opening formed in the second insulating layer and overlying the Schottky contact opening, wherein the contact opening is larger than the Schottky contact opening;
- and
- a metal layer contacting the semiconductor region through the Schottky contact opening and contacting the conductive ring through the contact opening, wherein the conductive ring is configured to enhance reverse breakdown voltage of the Schottky barrier structure.
A method for forming a Schottky diode structure comprising the steps of:
- forming a first insulating layer overlying a major surface of a semiconductor region;
- forming a conductive layer overlying the first insulating layer, wherein the conductive layer is configured to enhance reverse breakdown voltage of the Schottky diode;
- forming a Schottky contact opening through the conductive layer and the first insulating layer;
- forming a second insulating layer overlying the conductive layer;
- forming a contact opening in the second insulating layer to expose portions of the conductive layer and the semiconductor region;
- and
- forming a metal layer contacting the semiconductor region and the conductive layer, wherein the metal layer forms a Schottky barrier with the semiconductor region.
Dependencies are inferred from the claim text.