Semiconductor light emitting device and its manufacture method
OwnerYoshiro Sato, Yoshiaki Yasuda +1inventors
InventorsYoshiro Sato, Yoshiaki Yasuda, Yoshihiro Nakamura
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Abstract
A semiconductor light emitting device is provided having a highly reliable reflection and electrode layer. The semiconductor light emitting device is manufactured by the steps of: forming an insulating film on a surface of a silicon substrate; forming an adhesion layer made of at least one of Ti and Cr on the insulating film; forming a barrier metal layer made of at least one of Ni, Pt and Pd on the adhesion layer; forming one or more silver alloy portions each constituting a silver alloy layer on the barrier metal layer; and electrically connecting at least one of the silver alloy portions to a semiconductor light emitting device chip.
Claims21
A semiconductor light emitting device comprising:
- a silicon substrate;
- one or more silver alloy portions each constituting a silver alloy layer formed over said silicon substrate;
- and
- a semiconductor light emitting diode chip electrically connected to said silver alloy portion,
- wherein said silver alloy portion forms a reflection surface.
A manufacture method for a semiconductor light emitting device comprising steps of:
- (a) forming an insulating film on a surface of a silicon substrate;
- (b) forming an adhesion layer made of at least one of Ti and Cr on said insulating film;
- (c) forming a barrier metal layer made of at least one of Ni, Pt and Pd on said adhesion layer;
- (d) forming one or more silver alloy portions each constituting a silver alloy layer on said barrier metal layer;
- and
- (e) electrically connecting at least one of said silver alloy portions to a semiconductor light emitting device chip.
A light emitting apparatus, comprising:
- a light emitting device that emits light;
- a substrate;
- an adhesion layer on a surface of said substrate, the adhesion layer including at least one of titanium (Ti) and chromium (Cr);
- a barrier layer on the adhesion layer, the barrier layer including at least one of nickel (Ni), platinum (Pt), and palladium (Pd);
- and
- a reflection layer on the barrier layer to reflect at least a portion of said light emitted by said light emitting device, the reflection layer including silver (Ag) in an amount of about 98 atomic % or more, bismuth (Bi) in an amount of about 0.05 atomic % to about 0.15 atomic %, and neodymium (Nd) in an amount of about 0.1 atomic % to about 1.0 atomic %.
Dependencies are inferred from the claim text.