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US 2007/0181850 A1Published application
Polishing liquid for barrier layer
AssigneeFUJIFILM Corporation
InventorsTetsuya Kamimura, Kenji Takenouchi
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Abstract
According to an aspect of the invention, there is provided a polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid including colloidal silica covered at a portion of a surface thereof with aluminum, and an oxidizing agent, wherein the polishing liquid has a pH of from 2 to 7.
Claims10
A polishing liquid for polishing a barrier layer of a semiconductor integrated circuit, the polishing liquid comprising colloidal silica covered at a portion of a surface thereof with aluminum, and an oxidizing agent, wherein the polishing liquid has a pH of from 2 to 7.
Dependencies are inferred from the claim text.