Cmp clean process for high performance copper/low-k devices
AssigneeTexas Instruments Incorporated
InventorsMona EISSA, Nilesh Doke, Eden Zielinski, Gregory Shinn
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Abstract
A post chemical-mechanical polishing cleaning method, comprising contacting a die with a first chemistry that removes at least some organic compounds and ions from a surface of the die. After contacting the die with the first chemistry, the method further comprises contacting the die with a second chemistry that removes at least some copper abutting the die surface. The method further comprises rinsing and drying the die.
Claims25
A post chemical-mechanical polishing cleaning method, comprising:
- contacting a die with a first chemistry that removes at least some organic compounds and ions from a surface of the die;
- after contacting the die with the first chemistry, contacting the die with a second chemistry that removes at least some contaminated metal and metal-containing compounds from the die surface by etching away at least some copper abutting the die surface;
- and
- after contacting the die with the second chemistry, rinsing and drying the die.
A system for cleaning a die following chemical-mechanical polishing, comprising:
- a first chemistry vessel adapted to remove organic compounds and ions from a die surface;
- a second chemistry vessel adapted to remove contaminated metal and metal-containing compounds from the die surface by removing at least some copper abutting the die surface;
- and
- a dryer adapted to rinse and dry the die;
- wherein the dryer is one of a spin-rinse dryer or an isopropanol dryer.
A method, comprising:
- fabricating a die using a fabrication device with a process technology rated at a maximum of approximately 120 nanometers;
- contacting the die with a first chemistry that removes at some organic compounds and ions from a surface of the die;
- and
- after contacting the die with the first chemistry, contacting the die with a second chemistry that removes contaminants by etching away at least some copper abutting the die surface.
Dependencies are inferred from the claim text.