Etch resistant heater and assembly thereof
AssigneeGeneral Electric Company
InventorsAkinobu Otaka, Takeshi Higuchi, Sridhar Ramaprasad Prasad, Wei Fan, Marc Schaepkens, Douglas A. Longworth
Life of this patent
Estimating the term…
Abstract
An etch resistant heater for use in a wafer processing assembly with an excellent ramp rate of at least 20° C. per minute. The heater is coated with a protective overcoating layer allowing the heater to have a radiation efficiency above 70% at elevated heater temperatures of >1500° C., and an etch rate in NF3 at 600° C. of less than 100 A/min.
Claims22
An apparatus for use in a wafer processing chamber, the apparatus comprising:
- a base substrate comprising one of graphite;
- refractory metals, transition metals, rare earth metals and alloys thereof;
- a sintered material including at least one of oxide, nitride, carbide, carbonitride or oxynitride of elements selected from a group consisting of B, Al, Si, Ga, refractory hard metals, transition metals;
- oxide, oxynitride of aluminum;
- and combinations thereof;
- wherein the base substrate is coated with an over-coating layer having a thermal conductivity greater than 100 W/m° K.
A plasma processing chamber for processing at least a semiconductor wafer, the plasma processing chamber comprising:
- at least a ceramic heater for heating the wafer;
- gas distribution plate defined over the electrostatic chuck;
- a pedestal for holding the electrostatic chuck;
- a source of cleaning gas communicating selectively with the chamber;
- wherein at least one of the heater, the gas distribution plate, and the pedestal has a surface coated with a over coating layer comprising pyrolytic graphite, and wherein
- the source of cleaning gas comprises NF3 and Cl2.
Dependencies are inferred from the claim text.