Semiconductor constructions, methods of patterning photoresist, and methods of forming semiconductor constructions

A method of patterning photoresist over a semiconductor construction, comprising:

• providing the semiconductor construction to have first and second regions, with the first region being more reflective than the second region;
• forming an optically saturable absorption layer over the first and second regions;
• forming the photoresist over the optically saturable absorption layer;
• reflecting electromagnetic radiation from the first region to optically alter a segment of the optically saturable absorption layer beneath the photoresist and thereby increase transparency of such segment;
• directing electromagnetic radiation into the photoresist;
• some of the directed electromagnetic radiation passing through the photoresist, bouncing from the first region, through the altered segment of the optically saturable absorption layer and into the photoresist;
• the directed electromagnetic radiation and bounced electromagnetic radiation together exposing a first portion of the photoresist to a threshold dose of radiation while a second portion of the photoresist remains not exposed to the threshold dose;
• and
• developing the photoresist to selectively remove either the first or second portion of the photoresist relative to the other of the first and second portions.

A method of forming a semiconductor construction, comprising:

• providing a semiconductor substrate;
• forming, in at least one cross-sectional view, spaced projections over the substrate;
• the spaced projections having upper surfaces which are defined to be first surfaces;
• regions between the spaced projections having upper surfaces which are defined to be second surfaces;
• the first surfaces having greater reflectivity than the second surfaces;
• forming a first layer over the first and second surfaces;
• forming a second layer over the first layer, the second layer being an optically saturable absorption layer;
• forming photoresist over the optically saturable absorption layer;
• reflecting electromagnetic radiation from the first surfaces to optically alter a segment of the optically saturable absorption layer beneath the photoresist and thereby increase transparency of such segment;
• and wherein any electromagnetic radiation reflected from the second surfaces is insufficient to significantly alter transparency of the optically saturable absorption layer;
• directing electromagnetic radiation into the photoresist;
• some of the directed electromagnetic radiation passing through the photoresist, bouncing from the first surfaces, through the altered segment of the optically saturable absorption layer and into the photoresist;
• the directed electromagnetic radiation and bounced electromagnetic radiation together exposing a first portion of the photoresist to a threshold dose of radiation while a second portion of the photoresist remains not exposed to the threshold dose;
• developing the photoresist to selectively remove either the first or second portion of the photoresist relative to the other of the first and second portions and thereby form gaps in the photoresist selectively over designated regions comprising either the first surfaces or the second surfaces;
• and
• extending the gaps through the first and second layers and to the designated regions.

A semiconductor construction, comprising:

• a semiconductor substrate;
• in at least one cross-sectional view, spaced projections over the substrate, the spaced projections being spaced from one another by an intervening region;
• a first layer over the spaced projections and over the intervening region between the spaced projections;
• an optically saturable absorption layer over the first layer;
• and
• photoresist over the optically saturable absorption layer.