Residue treatment system, residue treatment method, and method of manufacturing semiconductor device
AssigneeKabushiki Kaisha Toshiba
InventorsTsuyoshi Matsumura, Kazuhiko Takase
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Abstract
This disclosure concerns a residue treatment system including a treatment tank which treats residue with etching fluid, the residue being generated in a trench formed in an insulating film by dry etching; a measurement unit which measures a characteristic amount of the etching fluid; and a control unit which calculates treatment time for removing the residue on the basis of a value obtained by measuring the characteristic amount, the control unit calculating the treatment time by using correlation between an etching rate of the insulating film and the characteristic amount.
Claims13
A residue treatment system comprising:
- a treatment tank which treats residue with etching fluid, the residue being generated in a trench formed in an insulating film by dry etching;
- a measurement unit which measures a characteristic amount of the etching fluid;
- and
- a control unit which calculates treatment time for removing the residue on the basis of a value obtained by measuring the characteristic amount, the control unit calculating the treatment time by using correlation between an etching rate of the insulating film and the characteristic amount.
A residue treatment method comprising:
- measuring a value of a characteristic amount of a target etching fluid;
- calculating a target etching rate on the basis of the measured value by using correlation between the characteristic amount of a reference etching fluid and a reference etching rate of a reference insulating film, the correlation being obtained by etching the reference insulating film with the reference etching fluid;
- and
- calculating treatment time for removing residue on the basis of the calculated target etching rate, the residue being generated in the trench formed by dry etching of a target insulating film.
A method of manufacturing a semiconductor device comprising:
- depositing a target insulating film on a semiconductor substrate;
- selectively etching a part of the target insulating film by dry etching to form a trench;
- measuring a value obtained by measuring a characteristic amount of target etching fluid which removes residue generated in the trench;
- calculating treatment time for removing the residue on the basis of the measured value by using correlation between a characteristic amount of a reference etching fluid and a reference etching rate of a reference insulating film, the correlation being obtained by etching the reference insulating film with the reference etching fluid;
- removing the residue with the target etching fluid for the calculated treatment time.
Dependencies are inferred from the claim text.