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US 2007/0178699 A1Published application
Method and system for advanced process control in an etch system by gas flow control on the basis of cd measurements
AssigneeAdvanced Micro Devices, Inc.
InventorsMatthias Schaller, Uwe Schulze, Mathias Baranyai
Life of this patent
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Abstract
By controlling the flow rate of one or more gaseous components of an etch ambient during the formation of metal lines and vias on the basis of feedback measurement data from critical dimensions, process variations may be reduced, thereby enhancing performance and reliability of the respective metallization structure.
Claims24
A method, comprising:
- etching a first substrate in an etch atmosphere to form a feature above said first substrate, said etch atmosphere being established by supplying at least one gaseous component;
- and
- controlling a supplying of said at least one gaseous component on the basis of a measured value of a characteristic of said feature on said first substrate when etching in a second etch atmosphere a second substrate to form a feature above said second substrate.
A method, comprising:
- obtaining a measured value of a characteristic of a feature, said feature being formed above a substrate by an etch process in an etch ambient established by supplying at least one precursor according to a specified supply parameter;
- determining an updated value for said supply parameter on the basis of said measured value and a model of said etch process;
- and
- processing one or more further substrates in said etch ambient using said updated value to form a corresponding feature above said one or more substrates.
1 more element
A control system, comprising:
- a control section configured to determine at least one updated manipulated variable of a supply parameter for one or more etch process tools on the basis of a model and a measurement data related to a process output associated with each of said one or more etch process tools.
Dependencies are inferred from the claim text.