Semiconductor device comprising a metallization layer stack with a porous low-k material having an enhanced integrity
OwnerMarkus Nopper, Udo Nothelfer +1inventors
InventorsMarkus Nopper, Udo Nothelfer, Axel Preusse
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Abstract
By using a patterned sacrificial layer for forming highly conductive metal regions, the formation of a reliable conductive barrier layer may be accomplished prior to the actual deposition of a low-k dielectric material. Hence, even highly porous dielectrics may be used in combination with highly conductive metals, substantially without compromising the diffusion characteristics and the electromigration performance. Hence, metallization layers for highly scaled semiconductor devices having critical dimensions of 50 nm and significantly less may be provided.
Claims22
A method, comprising:
- forming an opening in a sacrificial layer formed above a substrate of a semiconductor device;
- forming a metal region in said opening;
- removing said sacrificial layer;
- and
- depositing a low-k dielectric material to embed said metal region in said low-k dielectric material.
A method, comprising:
- forming a metal region above a substrate of a semiconductor device, said metal region having a conductive barrier layer formed on at least a sidewall surface of said metal region;
- and
- forming a low-k dielectric layer on said previously formed conductive barrier layer.
Dependencies are inferred from the claim text.