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US 2007/0178663 A1Published application
Methods of forming a trench having side surfaces including a uniform slope
AssigneeSamsung Electronics Co., Ltd.
InventorKi-Chul Kim
Life of this patent
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Abstract
Provided herein are methods of forming a trench including forming a mask layer on a substrate, forming a mask pattern to expose the substrate, using plasma to at least partially remove by-products produced during formation of the mask pattern; and etching the exposed substrate to form a trench having side surfaces including a uniform slope.
Claims24
A method of forming a trench in a substrate, comprising:
- forming a mask layer on a substrate;
- forming a mask pattern to expose the substrate;
- using plasma to at least partially remove a by-product produced during formation of the mask pattern;
- and
- etching the exposed substrate to form a trench having side surfaces including a uniform slope.
2 more elements
A method of forming a trench in a substrate, comprising:
- forming a mask layer on a substrate;
- forming a mask pattern to expose the substrate;
- at least partially removing a native oxide layer formed on the exposed surface and/or at least some surface pollutants on the exposed surface;
- using a plasma to at least partially remove a by-product produced during formation of the mask pattern;
- and
- etching the exposed substrate to form a trench having side surfaces including a uniform slope.
3 more elements
Dependencies are inferred from the claim text.