Method of forming isolation structures in a semiconductor manufacturing process
AssigneeMacronix International Co., Ltd.
InventorsChun Chen, Yung Hung, Chi Huang, Chen Liao
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Abstract
A method for forming shallow trench isolation structures is disclosed. The methods include providing a substrate having an upper surface and having an opening extending down from said upper surface, providing a first dielectric layer over at least a portion of the upper surface of the substrate and filling the opening, providing a second dielectric layer over the first dielectric layer, and removing portions of the first and second dielectric layers, wherein the first dielectric layer has a higher index of refraction than the second dielectric layer.
Claims23
A method for forming a shallow trench isolation structure, comprising:
- a) providing a substrate having an upper surface and having an opening extending down from said upper surface;
- b) providing a first dielectric layer over at least a portion of the upper surface of the substrate and filling the opening;
- c) providing a second dielectric layer over the first dielectric layer;
- and
- d) removing portions of the first and second dielectric layers;
- wherein the first dielectric layer has a higher index of refraction than the second dielectric layer.
A method for forming a shallow trench isolation structure, comprising:
- a) providing a substrate having an upper surface formed of silicon nitride and an opening extending down from said upper surface, said opening at least partially filled with a first dielectric material;
- b) providing a second dielectric material over the first dielectric material;
- wherein the second dielectric material is removed at a faster rate than the first dielectric material under substantially the same polishing conditions.
Dependencies are inferred from the claim text.