Method of manufacturing a semiconductor device

Abstract

A semiconductor device manufacturing method whereby a capacitor protective layer for ferroelectric capacitors of FeRAM can be prevented from peeling off. A lower electrode layer, a ferroelectric layer and an upper electrode layer are successively formed one upon another. The upper electrode layer is etched to form an upper electrode pattern, then the ferroelectric layer is etched to form a ferroelectric pattern, and a chemical solution treatment is performed on the resulting structure by using a mixed liquid of ammonia, hydrogen peroxide and water. Subsequently, a capacitor protective layer is formed, and then the lower electrode layer is etched to form a lower electrode pattern. A volatile etching residue produced during the formation of the ferroelectric pattern and adhering to the wafer surface, including the exposed lower electrode layer, is removed by the chemical solution treatment, whereby the subsequently formed capacitor protective layer is prevented from peeling off.

Dependencies are inferred from the claim text.