Semiconductor devices having recessed structures and methods of forming the same
AssigneeNanya Technology Corporation
InventorsChih-Huang WU, Chien-Jung YANG
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Abstract
A method for forming a semiconductor device is provided. The method includes providing a substrate having a plurality of protrusions projecting from the substrate; forming a silicon layer over the substrate and each protrusion; performing an anisotropic etching to transfer the silicon layer into a silicon spacer positioned on a side wall of each protrusion; forming an oxide layer over the silicon spacer; and etching the substrate to form a recess on the substrate by using the oxide layer as a mask.
Claims20
A method of forming a semiconductor device, comprising:
- providing a substrate including at least four protrusions projecting from said substrate, said at least four protrusions being arranged as a quadrangle to define a diagonal direction;
- forming a silicon layer above said substrate and each protrusion;
- performing an ion implanting along said diagonal direction to form an implanted region and a non-implanted region in said silicon layer;
- performing an anisotropic etching to transform said silicon layer into a silicon spacer positioned on a side wall of each protrusion;
- forming a first oxide layer over said non-implanted region in said silicon spacer and a second oxide layer over said implanted region in said silicon spacer, said first oxide layer being thicker than said second oxide layer;
- etching said second oxide layer;
- and
- etching said substrate by using said first oxide layer as a mask to form a recess on said substrate.
A method of forming a semiconductor device, comprising:
- providing a substrate including at least four protrusions projecting from said substrate, said at least four protrusions being arranged as a quadrangle to define a diagonal direction;
- forming a silicon layer above said substrate and each protrusion;
- performing an ion implanting along said diagonal direction to form an implanted region and a non-implanted region in said silicon layer;
- performing an anisotropic etching to transform said silicon layer into a silicon spacer positioned on a side wall of each protrusion;
- forming an oxide layer over said silicon spacer;
- and
- etching said substrate by using said oxide layer as a mask to form a recess on said substrate.
A method of forming a semiconductor device, comprising:
- providing a substrate including a plurality of protrusions projecting from said substrate;
- forming a silicon layer above said substrate and each protrusion;
- performing an anisotropic etching to transform said silicon layer into a silicon spacer positioned on a side wall of each protrusion;
- forming an oxide layer over said silicon spacer;
- and
- etching said substrate by using said oxide layer as a mask to form a recess on said substrate.
Dependencies are inferred from the claim text.