Semiconductor device comprising a transistor having a counter-doped channel region and method for forming the same

A method of making a semiconductor device, comprising:

• providing a first substrate region and a second substrate region, wherein at least a part of the first substrate region has a first conductivity type and at least a part of the second substrate region has a second conductivity type different from the first conductivity type;
• forming a dielectric layer over at least a portion of the first substrate region and at least a portion of the second substrate region;
• forming a first metal-containing gate layer over at least a portion of the dielectric layer overlying the first substrate region;
• forming a second metal-containing gate layer over at least a portion of the dielectric layer overlying the first metal-containing gate layer and the second substrate region;
• and
• introducing dopants into at least a portion of the second substrate region through the second metal-containing gate layer.

A method of making a semiconductor device, comprising:

• providing a first substrate region and a second substrate region, wherein at least a part of the first substrate region has a first conductivity type and at least a part of the second substrate region has a second conductivity type different from the first conductivity type;
• forming a dielectric layer over at least a portion of the first substrate region and at least a portion of the second substrate region;
• forming a metal-containing gate layer over at least a portion of the dielectric layer;
• and
• introducing dopants into at least a portion of the first substrate region through the metal-containing gate layer.