Magnetoresistive element manufacturing method and magnetic memory device manufacturing method

A magnetic memory device manufacturing method comprising:

• forming a material layer on a substrate, the material layer including a fixed layer, a recording layer, and a nonmagnetic layer sandwiched between the fixed layer and the recording layer;
• forming a mask material on the material layer;
• forming a first mask with a desired pattern by processing the mask material by using imprint lithography;
• forming a magnetoresistive element with the desired pattern by processing the recording layer, the fixed layer, and the nonmagnetic layer at once by using the first mask, the magnetoresistive element being a memory element in an magnetic random access memory;
• and
• forming a bit line and a word line above and under the magnetoresistive element.