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US 2007/0178388 A1Published application
Semiconductor devices and methods of manufacturing thereof
AssigneeInfineon Technologies AG
InventorsMatthias Lipinski, Alois Gutmann, Jingyu Lian, Chandrasekhar Sarma, Haoren Zhuang
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Abstract
Semiconductor devices and methods of manufacturing thereof are disclosed. A plurality of features is formed on a workpiece, the plurality of features being located in a first region and a second region of the workpiece. Features in the first region have a first lateral dimension, and features in the second region have a second lateral dimension, wherein the second lateral dimension is greater than the first lateral dimension. The first region is masked, and the second lateral dimension of features in the second region is reduced.
Claims27
A method of manufacturing a semiconductor device, the method comprising:
- providing a workpiece;
- forming a plurality of features on the workpiece, the plurality of features being disposed in a first region and a second region of the workpiece, at least one first feature in the first region comprising a first lateral dimension, at least one second feature in the second region comprising a second lateral dimension, wherein the second lateral dimension is greater than the first lateral dimension;
- masking the first region of the workpiece;
- and
- reducing the second lateral dimension of the at least one second feature in the second region.
2 more elements
A method of patterning a material layer of a semiconductor device, the method including:
- providing a workpiece;
- depositing the material layer over the workpiece, the workpiece comprising a first region and a second region;
- depositing a first layer of photosensitive material over the material layer;
- patterning the first layer of photosensitive material with a pattern comprising at least one first feature in the first region and at least one second feature in the second region;
- using the first layer of photosensitive material as a mask to pattern the material layer, forming at least one first feature in the first region and at least one second feature in the second region, the at least one second feature comprising a greater lateral dimension than the at least one first feature;
- removing the first layer of photosensitive material;
- depositing a second layer of photosensitive material over at least one first feature, the at least one second feature, and exposed portions of the workpiece;
- removing the second layer of photosensitive material from over the second region;
- and
- reducing the lateral dimension of the at least one second feature in the second region.
7 more elements
A method of forming a plurality of gates of a semiconductor device, the method comprising:
- providing a workpiece, the workpiece comprising a first region and a second region;
- forming a gate dielectric material over the workpiece;
- forming a gate material over the gate dielectric material;
- depositing a first masking material over the gate material;
- providing a first lithography mask, the first lithography mask comprising a first pattern in the first region of the workpiece and a second pattern in the second region of the workpiece, the second pattern comprising at least one second feature comprising the same dimension as a plurality of first features of the first pattern;
- patterning the first masking material using the first lithography mask;
- using the first masking material as a mask to pattern at least the gate material, each first feature of the first lithography mask forming a first gate in the first region and each second feature of the first lithography mask forming a second gate in the second region, wherein an at least one second gate comprises a different dimension than a dimension of the plurality of first features;
- depositing a second masking material over the gate material;
- providing a second lithography mask, the second lithography mask being adapted to expose the second region, but not the first region of the workpiece;
- patterning the second masking material using the second lithography mask, removing the second masking material over the second region and leaving the second masking material over the first region;
- and
- removing a portion of the gate material from the at least one second gate in the second region.
9 more elements
A method of designing a lithography mask set, the method comprising:
- designing a layout for a semiconductor device, the layout including a plurality of first features in a first region of a workpiece and at least one second feature in a second region of the workpiece, the plurality of first features and the at least one second feature of the layout comprising a first lateral dimension;
- designing a first lithography mask adapted to pattern a workpiece with the plurality of first features in the first region of the workpiece and the at least one second feature in the second region of the workpiece, the first lithography mask including a first pattern for the first features in the first region of the workpiece that is optimized to produce the plurality of first features in the first region of the workpiece comprising the first lateral dimension or less, the first lithography mask including a second pattern for the at least one second feature that is adapted to produce the at least one second feature in the second region of the workpiece having a second lateral dimension, the second lateral dimension being greater than the first lateral dimension;
- and
- designing a second lithography mask adapted to mask the first region of the workpiece while the second lateral dimension is reduced.
1 more element
A lithography mask set, comprising:
- a first lithography mask for patterning a first region and a second region of a workpiece, the first lithography mask comprising a first pattern in the first region of the workpiece and a second pattern in the second region of the workpiece, the second pattern comprising at least one second feature comprising the same dimension as a plurality of first features of the first pattern;
- and
- a second lithography mask, the second lithography mask being adapted to expose the second region, but not the first region of the workpiece, wherein when the first lithography mask is used to pattern a material layer of a workpiece, at least one second feature is formed in the second region of the workpiece having a greater lateral dimension than a plurality of first features formed in the first region of the workpiece, and wherein the second lithography mask is adapted to mask the first region of the workpiece while the lateral dimension of the at least one second feature is reduced.
Dependencies are inferred from the claim text.