Methods of forming metal layers using metal-organic chemical vapor deposition

A method of forming a metal layer, comprising:

• using a MOCVD process to form on a dielectric layer a metal layer having a first thickness;
• performing a first plasma process on the metal layer;
• using the MOCVD process to form a metal layer having a second thickness on the metal layer having the first thickness, wherein the second thickness is greater than the first thickness;
• and
• performing a second plasma process on the metal layer having the second thickness.

A method of forming a metal layer, comprising:

• using a metal-organic chemical vapor deposition (MOCVD) process to form on a dielectric layer a metal layer having a first thickness on a dielectric layer;
• performing a first plasma process on the metal layer, wherein the plasma power of the first plasma process is in a range from about 1250 to 1750 W;
• using the MOCVD process to form a metal layer having a second thickness on the metal layer having the first thickness;
• and
• performing a second plasma process on the metal layer having the second thickness, wherein the plasma power of the second plasma process is in a range from about 1250 to 1750 W.