Thin film-forming material and method for producing thin film

Abstract

The thin film-forming material of the present invention comprises a bis(β-diketonato)zinc compound that is liquid at 25° C. and is suitable for forming a zinc-containing thin film. By using the thin film-forming material, a thin film can be produced with stable film-forming rate or stable film composition control without suffering from problems of raw material gas suppliability and in-line raw material transport. Preferred (β-diketonato)zinc compounds include, for example, bis(octane-2,4-dionato)zinc and bis(2,2-dimethyl-6-ethyldecane-3,5-dionato)zinc.

Dependencies are inferred from the claim text.