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AssigneeShinko Electric Industries Co., Ltd.
InventorsAkinori Shiraishi, Naoyuki Koizumi, Kei Murayama, Hideaki Sakaguchi, Masahiro Sunohara, Yuichi Taguchi, Mitsutoshi Higashi
Estimating the term…
According to a sealed structure 60 constituted by anodically bonding a silicon board 20 and a glass plate 40, an upper opening of a recessed portion 22 is sealed in an airtight state by the glass plate 40 by bonding an upper face of a wall portion 26 to the glass plate 40. A voltage applying pattern 70 is formed to surround a light transmitting region to which an optical conversion element 24 is opposed. Further, the voltage applying pattern 70 functions as a cathode pattern applied with a voltage by being brought into contact with a lower face of the cathode plate 50.
A sealed structure comprising:
A method for fabricating a sealed structure including a recessed portion at either a silicon board or a glass plate to be bonded to the silicon board, an anode plate in contact with the silicon board, a cathode plate in contact with the glass plate, the silicon board and the glass plate being anodically bonded to seal the recessed portion,
A semiconductor device, comprising:
A method of fabricating a semiconductor device having a sealed structure for sealing a recessed portion by providing the recessed portion at either a silicon board or a glass plate to be bonded to the silicon board, an anode plate in contact with the silicon board, and a cathode plate in contact with the glass plate, the silicon board and the glass plate being anodically bonded to seal the recessed portion,
Dependencies are inferred from the claim text.