Semiconductor device having fuse element and method of cutting fuse element
AssigneeElpida Memory, Inc.
InventorSumio Ogawa
Life of this patent
Estimating the term…
Abstract
A semiconductor device includes a lower electrode, an upper electrode, and a fuse element that connects the lower electrode and the upper electrode. The height of the fuse element is greater than the depth of focus of a laser beam to be irradiated. The diameter of the fuse element is smaller than the diffraction limit of the laser beam. Thus, in the present invention, a vertically long fuse element is used, so that it is possible to efficiently absorb the energy of the laser beam. It is possible to cut the fuse element by using an optical system having a small depth of focus, so that the damage imposed on a member located above or below the fuse element is very small. As a result, the fuse element can be without destructing the passivation film.
Claims23
A semiconductor device, comprising:
- a lower electrode arranged in a first wiring layer;
- an upper electrode arranged in a second wiring layer located higher than the first wiring layer;
- and
- a fuse element that connects the lower electrode and the upper electrode, a height of the fuse element being at least three times greater than a diameter of the fuse element.
A semiconductor device, comprising:
- a lower electrode arranged in a first wiring layer;
- an upper electrode arranged in a second wiring layer located higher than the first wiring layer;
- and
- a plurality of fuse elements that connect the lower electrode and the upper electrode, a distance between adjacent fuse elements being smaller than a height of the fuse element.
A semiconductor device, comprising:
- a lower electrode arranged in a first wiring layer;
- an upper electrode arranged in a second wiring layer located higher than the first wiring layer;
- and
- a fuse element that connects the lower electrode and the upper electrode, a height of the fuse element being greater than a depth of focus of a laser beam to be irradiated.
A semiconductor device, comprising:
- a plurality of fuse elements that can be cut by irradiation with a laser beam;
- and
- a passivation film, which is formed seamless and continuous, arranged in an area that covers at least the fuse elements, wherein
- at least one of the fuse elements is cut by laser beam irradiation.
A method of cutting a fuse element employed in a semiconductor device, comprising:
- step for providing the semiconductor device;
- and
- step for irradiating a laser beam to the fuse element, the laser beam has a depth of focus smaller than a height of the fuse element, and has a diffraction limit greater than a diameter of the fuse element.
A method of cutting a tubular fuse element having a hollow portion employed in a semiconductor device, comprising:
- step for providing the semiconductor device;
- and
- step for irradiating a laser beam to the tubular fuse element from an axial direction.
Dependencies are inferred from the claim text.